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| NTLGD3502N Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package Features * * * * * Exposed Drain Package Excellent Thermal Resistance for Superior Heat Dissipation Low Threshold Levels Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin Environments This is a Pb-Free Device http://onsemi.com MOSFET I V(BR)DSS 20 V RDS(on) MAX 60 mW @ 4.5 V ID MAX 5.8 A Applications * DC-DC Converters (Buck and Boost Circuits) * Power Supplies * Hard Disk Drives MOSFET I MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 5.0 s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C TA = 25C t 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 20 4.3 3.0 5.8 1.74 17.2 -55 to 150 1.6 260 W A Unit V V A 3 MOSFET II V(BR)DSS 20 V RDS(on) MAX 90 mW @ 4.5 V ID MAX 4.6 A 4 Heatsink 2 1 2 3 1 2 5 2 6 1 2, 5 3 4 6 5 4 Heatsink 1 1 Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C 6 = Gate 1 = Drain 1/Source 2 = Gate 2 = Drain 2 = Source 1 MOSFET II MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State t 5.0 s Power Dissipation (Note 1) Pulsed Drain Current Steady State TA = 25C TA = 85C TA = 25C TA = 25C t 10 ms PD IDM TJ, TSTG IS TL Symbol VDSS VGS ID Value 20 12 3.6 2.5 4.6 1.74 13.8 -55 to 150 1.7 260 W A Unit V V A 1 3502 A Y WW G DFN6 CASE 506AG MARKING DIAGRAMS 1 3502 AYWW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package Operating Junction and Storage Temperature Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) C A C ORDERING INFORMATION Device NTLGD3502NT1G NTLGD3502NT2G Package DFN6 (Pb-free) DFN6 (Pb-free) Shipping 3000/Tape & Reel 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces) 2. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm2, 1 oz. Cu (c) Semiconductor Components Industries, LLC, 2007 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 July, 2007 - Rev. 1 Publication Order Number: NTLGD3502N/D NTLGD3502N THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t 5 s (Note 1) Junction-to-Ambient - Steady State min Pad (Note 2) Junction-to-Ambient - Pulsed (25% duty cycle) min Pad (Note 2) Symbol RqJA RqJA RqJA RqJA Max 72 40 110 60 Unit C/W MOSFET I ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Off Characteristics Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, ref to 25C VGS = 0 V, VDS = 16 V TJ = 25C TJ = 125C Gate-to-Source Leakage Current On Characteristics (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance Forward Transconductance Charges, Capacitances & Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Gate Resistance CISS COSS CRSS QG(TOT) QGS QGD RG VGS = 4.5 V, VDS = 10 V; ID = 4.3 A (Note 3) VGS = 0 V, f = 1 MHz, VDS = 10 V 250 138 52 2.9 1.0 1.1 1.5 W 480 200 90 4.0 nC pF VGS(TH) VGS(TH)/TJ RDS(on) gFS VGS = 4.5 V, ID = 4.3 A VDS = 10 V, ID = 4.0 A VGS = VDS, ID = 250 mA 1.0 1.7 -4.4 50 5.9 60 2.0 V mV/C mW S IGSS VDS = 0 V, VGS = 20 V 20 10 1.0 10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 1.6 A TJ = 25C TJ = 125C Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A 0.78 0.63 16.7 8.2 8.5 7.0 nC ns 1.2 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 10 V, ID = 4.3 A, RG = 10 W 7.0 17.5 8.6 3.3 12 25 15 5.0 ns 3. Pulse Test: pulse width 300 ms, duty cycle 2% 4. Switching characteristics are independent of operating junction temperatures http://onsemi.com 2 NTLGD3502N MOSFET II ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Parameter Off Characteristics Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/TJ IDSS VGS = 0 V, ID = 250 mA ID = 250 mA, ref to 25C VGS = 0 V, VDS = 16 V TJ = 25C TJ = 125C Gate-to-Source Leakage Current On Characteristics (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain-to-Source On Resistance VGS(TH) VGS(TH)/TJ RDS(on) VGS = 4.5 V, ID = 3.4 A VGS = 2.5 V, ID = 1.7 A Forward Transconductance Charges, Capacitances & Gate Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 4.5 V, VDS = 10 V; ID = 3.4 A VGS = 0 V, f = 1 MHz, VDS = 10 V 144 67 22 2.1 0.11 0.42 0.7 275 125 40 5.0 nC pF gFS VDS = 10 V, ID = 3.4 A VGS = VDS, ID = 250 mA 0.6 -2.8 70 95 6.7 90 120 S 2.0 V mV/C mW IGSS VDS = 0 V, VGS = 12 V 20 22 1 10 100 nA V mV/C mA Symbol Test Conditions Min Typ Max Unit Switching Characteristics, VGS = 4.5 V (Note 6) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Diode Characteristics Forward Diode Voltage VSD VGS = 0 V, IS = 1.7 A TJ = 25C TJ = 150C Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge tRR ta tb QRR VGS = 0 V, dISD/dt = 100 A/ms, IS = 1.0 A 0.8 0.63 12 8.0 4.0 5.0 nC ns 1.15 V td(ON) tr td(OFF) tf VGS = 4.5 V, VDD = 16 V, ID = 3.4 A, RG = 10 W 4.8 13.6 9.0 1.9 10 25 20 5.0 ns 5. Pulse Test: pulse width 300 ms, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures http://onsemi.com 3 NTLGD3502N TYPICAL MOSFET I N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 10 ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 2.5 V 2.3 V 7 8 2.7 V 3.5 V TJ = 25C 2.9 V 10 3.3 V 3.1 V ID, DRAIN CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 1 25C TJ = -55C 1.5 2 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 100C VDS 10 V VGS = 3.7 V to 6.5 V VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 ID = 4.3 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.0510 Figure 2. Transfer Characteristics TJ = 25C 0.0505 0.0500 VGS = 4.5 V 0.1 0.0495 0.0490 0.0485 1.5 2.5 3.5 4.5 ID, DRAIN CURRENT (AMPS) 0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6.0 Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.7 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 100 -25 0 25 50 75 100 125 150 ID = 4.3 A VGS = 4.5 V IDSS, LEAKAGE (nA) 10,000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 125C 5 10 15 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 4 NTLGD3502N TYPICAL MOSFET I N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS = 0 V 350 C, CAPACITANCE (pF) 300 250 200 150 100 CRSS 50 0 0 5 10 15 20 25 30 DRAIN-TO-SOURCE VOLTAGE (VOLTS) COSS CISS TJ = 25C VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 400 6 QT VDS 4 QGS QGD VGS 6 4 ID = 4.3 A TJ = 25C 0 0 1 2 3 Qg, TOTAL GATE CHARGE (nC) 2 0 8 12 10 2 Figure 7. Capacitance Variation 100 VDD = 10 V ID = 4.3 A VGS = 4.5 V t, TIME (ns) Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 10 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 125C TJ = 25C tr 10 td(off) td(on) TJ = 150C 1 tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 TJ = -55C 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 10. Diode Forward Voltage vs. Current 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.000001 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 11. FET Thermal Response http://onsemi.com 5 NTLGD3502N TYPICAL MOSFET II N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) 7 ID, DRAIN CURRENT (AMPS) 6 VGS = 2.4 V to 10 V 5 4 3 2 1 1.6 V 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 1 1.8 V 2V TJ = 25C 2.2 V ID, DRAIN CURRENT (AMPS) 7 6 5 4 3 100C 2 1 TJ = -55C 1.5 2 2.5 3 3.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 25C VDS 10 V Figure 12. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.2 ID = 3.4 A TJ = 25C RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.12 Figure 13. Transfer Characteristics TJ = 25C 0.1 VGS = 2.5 V 0.08 0.1 0.06 VGS = 4.5 V 0 1 2 3 4 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 0.04 1.5 2.5 3.5 4.5 ID, DRAIN CURRENT (AMPS) Figure 14. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1 0.8 0.6 -50 1 -25 0 25 50 75 100 125 150 5 ID = 3.4 A VGS = 4.5 V IDSS, LEAKAGE (nA) 100 1000 Figure 15. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 10 TJ = 100C 10 15 20 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 16. On-Resistance Variation with Temperature Figure 17. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 6 NTLGD3502N TYPICAL MOSFET II N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS = 0 V C, CAPACITANCE (pF) 300 TJ = 25C VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V) 400 6 12 10 8 VGS 6 QGS 2 ID = 3.4 A TJ = 25C 0 0 1 2 Qg, TOTAL GATE CHARGE (nC) QGD 4 2 0 QT 4 VDS 200 CISS COSS 100 CRSS 0 0 5 10 15 20 DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 18. Capacitance Variation 100 VDS = 16 V ID = 3.4 A VGS = 4.5 V t, TIME (ns) 10 IS, SOURCE CURRENT (AMPS) Figure 19. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 100C TJ = 25C tr 10 td(off) td(on) TJ = 150C 1 tf 1 1 10 RG, GATE RESISTANCE (OHMS) 100 TJ = -55C 0.5 0.6 0.7 0.8 0.9 1.0 0.1 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 20. Resistive Switching Time Variation vs. Gate Resistance Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE Figure 21. Diode Forward Voltage vs. Current 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, TIME (s) 1 10 100 1000 Figure 22. FET Thermal Response http://onsemi.com 7 NTLGD3502N PACKAGE DIMENSIONS DFN6 3*3 MM, 0.95 PITCH CASE 506AG-01 ISSUE O B D A PIN 1 REFERENCE NOTES: 1. DIMENSIONS AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMESNION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MILLIMETERS MIN NOM MAX 0.80 0.90 1.00 0.00 0.03 0.05 0.20 REF 0.35 0.40 0.45 3.00 BSC 1.00 1.10 1.20 0.65 0.75 0.85 3.00 BSC 1.50 1.60 1.70 0.95 BSC 0.21 ----0.30 0.40 0.50 0.05 REF 0.40 REF E DIM A A1 A3 b D D2 D3 E E2 e K L H1 H2 2X 0.15 C 2X 0.15 C 0.10 C 6X 0.08 C SIDE VIEW D2 6X L 1 6X K 6 4 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative CCC CCC CCC H1 H2 TOP VIEW A (A3) A1 SEATING PLANE C D3 e 3 4X SOLDERING FOOTPRINT* 0.450 0.0177 E2 0.850 0.0334 0.950 0.0374 6X b (NOTE 3) 0.10 C A B 0.05 C 3.31 0.130 1.700 0.685 BOTTOM VIEW 0.63 0.025 1.20 0.0472 0.35 0.014 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 8 NTLGD3502N/D |
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